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Stability of hydrogenated polymorphous silicon thin-film transistors under DC electrical stress

✍ Scribed by Brochet, J.; Aventurier, B.; Templier, F.

Book ID
114442602
Publisher
The Institution of Engineering and Technology
Year
2012
Tongue
English
Weight
397 KB
Volume
6
Category
Article
ISSN
1751-858X

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## Abstract The crucial influence of the interface between the gate dielectric and intrinsic layer has been studied in detail for amorphous silicon, polymorphous silicon and microcrystalline silicon bottom gate thin‐film transistors. We show that the electrical parameters of the TFTs depend directl