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Study of silicon carbide epitaxial growth kinetics in the SiC-C system

✍ Scribed by S.K. Lilov; Yu.M. Tairov; V.F. Tsvetkov

Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
350 KB
Volume
46
Category
Article
ISSN
0022-0248

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πŸ“œ SIMILAR VOLUMES

Epitaxial growth of silicon carbide laye
Epitaxial growth of silicon carbide layers by sublimation β€žsandwich method” (I) growth kinetics in vacuum
✍ Dr. Yu. A. Vodakov; E. N. Mokhov; M. G. Ramm; A. D. Roenkov πŸ“‚ Article πŸ“… 1979 πŸ› John Wiley and Sons 🌐 English βš– 826 KB

The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retardi