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Study of Reactive Ion Etching Processes for Schottky Barrier Diode Formations

โœ Scribed by Bauza, D. ;Mallardeau, C. ;Pananakakis, G.


Book ID
105383655
Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
623 KB
Volume
137
Category
Article
ISSN
0031-8965

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## ลฝ . Change in Schottky barrier height SBH of TirSi surface damaged by CHF rO plasma treatment was investigated as a 3 2 function of annealing temperature. SBH of the damaged interface was initially higher than that of clean interface. The SBH of damaged interface increased with increasing the a