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Study of nanocrystalline Ta(N,O) diffusion barriers for use in Cu metallization

✍ Scribed by Momtchil Stavrev; Dirk Fischer; Andrea Preuß; Christian Wenzel; Norbert Mattern

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
367 KB
Volume
33
Category
Article
ISSN
0167-9317

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✦ Synopsis

In this study, the film properties and the barrier behaviour of 50 nm thin reactively sputtered Ta(N,O) diffusion barriers between Cu and Si were investigated. Auger electron microscopy, glancing-angle x-ray diffractometry and atomic force microscopy revealed that the Ta(N,O) films exhibit quasi-amorphous/nanocrystalline properties. Using sheet resistance measurements, scanning electron microscopy, Auger electron spectroscopy depth profiling and conventional x-ray diffractometry the 50 nm thin Ta(N,O) films were found to be effective diffusion barriers between Cu overlayers and Si substrates even after 1 h annealing at 600°C.

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