AFM Characterization of Ta-based Diffusion Barriers for Use in Future Semiconductor Metallization

✍ Scribed by Fischer, D.; Meissner, O.; Bendjus, B.; Schreiber, J.; Stavrev, M.; Wenzel, C.

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 609 KB
• Volume: 25
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/(sici)1096-9918(199706)25:7/8<522::aid-sia262>3.0.co;2-f

✦ Synopsis

In this paper the investigation of r.f.-sputter-deposited Ta, Ta-N and Ta-N-O thin Ðlms is presented. Using atomic force microscopy in combination with sheet resistance measurements, Auger electron spectroscopy and x-ray diffraction, the thin Ðlm properties and microstructure are examined. Two crystalline modiÐcations of Ta (tetragonal b-Ta and bcc a-Ta) are reported. By incorporation of nitrogen and/or oxygen into the Ta Ðlms, nanocrystalline and quasi-amorphous structures can be achieved. Finally, the usefulness of the Ðlms as di †usion barriers in Cu-based metallization systems is described.