In this study, the film properties and the barrier behaviour of 50 nm thin reactively sputtered Ta(N,O) diffusion barriers between Cu and Si were investigated. Auger electron microscopy, glancing-angle x-ray diffractometry and atomic force microscopy revealed that the Ta(N,O) films exhibit quasi-amo
✦ LIBER ✦
Study of Ta–Si–N thin films for use as barrier layer in copper metallizations
✍ Scribed by D. Fischer; T. Scherg; J.G. Bauer; H.-J. Schulze; C. Wenzel
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 353 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0167-9317
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