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Diffusion barrier performance of W/Ta–W–N double layers for Cu metallization

✍ Scribed by Shuangxi Song; Yuzhang Liu; Ming Li; Dali Mao; Chengkang Chang; Huiqin Ling

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
195 KB
Volume
83
Category
Article
ISSN
0167-9317

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An amorphous Ta-Zr binary alloy diffusion barrier was studied in the Cu metallization. A Cu/Ta 50 Zr 50 /SiO 2 /Si stack with 50 nm thick amorphous film was prepared by co-sputtering can effectively suppress the penetration of Cu atoms into substrate upon annealing up to 650 °C. Examining the therma