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Study of field emission and dielectric properties of AlN films prepared by DC sputtering technique at different substrate temperatures

✍ Scribed by R. Thapa; B. Saha; S. Goswami; K. K. Chattopadhyay

Book ID
107679760
Publisher
Springer-Verlag
Year
2010
Tongue
English
Weight
190 KB
Volume
84
Category
Article
ISSN
0019-5480

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✍ Atanas TanuΕ‘evski; Verka Georgieva πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 673 KB

The nanocrystal thin films of zinc oxide doped by Al (ZnO:Al) were deposited by dc reactive magnetron sputtering on the glass substrates, in the pressure range of 33-51 Pa. From the X-ray diffraction patterns, the nanocrystalline structure of ZnO:Al films and the grain size were determined. The opti