Thin films of ZrO 2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comp
β¦ LIBER β¦
Structural and electrical properties of RuO2thin films prepared by rf-magnetron sputtering and annealing at different temperatures
β Scribed by Y. K. Vayunandana Reddy; D. Mergel
- Publisher
- Springer US
- Year
- 2006
- Tongue
- English
- Weight
- 345 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0957-4522
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