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Structural dependence of electrical properties of Ge films prepared by RF magnetron sputtering

✍ Scribed by Chao-Yang Tsao; Johnson Wong; Jialiang Huang; Patrick Campbell; Dengyuan Song; Martin A. Green

Publisher
Springer
Year
2010
Tongue
English
Weight
675 KB
Volume
102
Category
Article
ISSN
1432-0630

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Thin films of ZrO 2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comp