Optical and electrical properties of nanocrystal zinc oxide films prepared by dc magnetron sputtering at different sputtering pressures

✍ Scribed by Atanas Tanuševski; Verka Georgieva

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 673 KB
• Volume: 256
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2010.03.059

✦ Synopsis

The nanocrystal thin films of zinc oxide doped by Al (ZnO:Al) were deposited by dc reactive magnetron sputtering on the glass substrates, in the pressure range of 33-51 Pa. From the X-ray diffraction patterns, the nanocrystalline structure of ZnO:Al films and the grain size were determined. The optical transmission spectra depend from the sputtering pressure, but their average value was 90% in the range from 33 Pa to 47 Pa. Also, the sputtering pressure changes the optical band gap of ZnO:Al films, which is highest for films deposited at 37 Pa, 40 Pa and 47 Pa. The obtained films at room temperature have a sheet resistance of 190 /cm 2 which increases with time, but the films annealed at temperature of 400 • C have constant resistance. The surface morphology of the films was studied by Scanning electron microscopy. XPS spectra showed that the peak of O1s of the as-deposited films is smaller than the peak of the annealed ZnO:Al films.