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Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure

✍ Scribed by W. Rzodkiewicz; A. Kudla; A. Misiuk; B. Surma; J. Bak-Misiuk; J. Härtwig; J. Ratajczak


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
259 KB
Volume
7
Category
Article
ISSN
1369-8001

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Silicon capped by thermal oxide has been implanted with 1 • 10 17 H/cm 2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality a