Effect of thermal annealing on the optical and structural properties of silicon implanted with a high hydrogen fluence

✍ Scribed by A. Kling; J.C. Soares; A. Rodríguez; T. Rodríguez; M. Avella; J. Jiménez

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 280 KB
• Volume: 242
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2005.08.087

✦ Synopsis

Silicon capped by thermal oxide has been implanted with 1 • 10 17 H/cm 2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality and light emission. The results show that the luminescent properties are independent of the hydrogen content but are strongly related with the present damage.