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Rutherford backscattering and channelling studies of buried nitride structures directly produced by high intensity ion implantation of nitrogen into silicon

✍ Scribed by RA Yankov; RV Gribkovskii; FF Komarov


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
376 KB
Volume
45
Category
Article
ISSN
0042-207X

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