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Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses

✍ Scribed by L.A. Charni; A.B. Danilin; K.A. Drakin; A.A. Malinin; Yu.N. Parkhomenko; A.F. Petrov; O.I. Vyletalina


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
484 KB
Volume
15
Category
Article
ISSN
0921-5107

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