Comparative study of the effect of annealing of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry, cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy

✍ Scribed by T. Lohner; W. Skorupa; M. Fried; K. Vedam; N. Nguyen; R. Grötzschel; H. Bartsch; J. Gyulai

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 448 KB
• Volume: 12
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90282-e