𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Structure properties of carbon implanted silicon layers

✍ Scribed by K. Kh. Nussupov; N. B. Beisenkhanov; I. V. Valitova; K. A. Mit’; D. M. Mukhamedshina; E. A. Dmitrieva

Publisher
Springer US
Year
2008
Tongue
English
Weight
562 KB
Volume
19
Category
Article
ISSN
0957-4522

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Optical properties of ion-implanted sili
Optical properties of ion-implanted silicon-on-sapphire layers
✍ Ch. Wilbertz; K.L. Bhatia; W. Krätschmer; S. Kalbitzer 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 584 KB

The Jormation of amorphous zones in thin heteroepitaxial layers" of silicon has been investigated by optical transmission spectroscopy' with ion species, dose, intensity and irradiation temperature as the main parameters. The dependence of the recrystallization of the irradiated layers on annealing

Picosecond optical measurements of the p
Picosecond optical measurements of the properties of heavily carbon-implanted silicon
✍ Steven C. Moss; John F. Knudsen; John E. Wessel 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 312 KB

We have used picosecond transient photoreflectance techniques to measure the near-surface characteristics of unimplanted silicon and of silicon heavily implanted with carbon. These laser-based diagnostic techniques are non-destructive and allow measurement of the modification of near-surface propert