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Picosecond optical measurements of the properties of heavily carbon-implanted silicon

✍ Scribed by Steven C. Moss; John F. Knudsen; John E. Wessel

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
312 KB
Volume
11
Category
Article
ISSN
0921-5107

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✦ Synopsis

We have used picosecond transient photoreflectance techniques to measure the near-surface characteristics of unimplanted silicon and of silicon heavily implanted with carbon. These laser-based diagnostic techniques are non-destructive and allow measurement of the modification of near-surface properties sensitive to both photocarrier and photothermal phenomena. Photothermal phenomena dominate these results and yield important information concerning the extent of implant-induced materials modification.

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