Optical properties of ion-implanted silicon-on-sapphire layers

✍ Scribed by Ch. Wilbertz; K.L. Bhatia; W. Krätschmer; S. Kalbitzer

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 584 KB
• Volume: 2
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90008-1

✦ Synopsis

The Jormation of amorphous zones in thin heteroepitaxial layers" of silicon has been investigated by optical transmission spectroscopy' with ion species, dose, intensity and irradiation temperature as the main parameters. The dependence of the recrystallization of the irradiated layers on annealing temperature and time has been studied. The optical contrast between crystalline and amorphous domains is" sufficient to allow applications for masking purposes and information storage.