The Jormation of amorphous zones in thin heteroepitaxial layers" of silicon has been investigated by optical transmission spectroscopy' with ion species, dose, intensity and irradiation temperature as the main parameters. The dependence of the recrystallization of the irradiated layers on annealing
Optical properties tailoring by high fluence implantation of Ag ions on sapphire
β Scribed by C. Marques; R.C. da Silva; A. Wemans; M.J.P. Maneira; A. Kozanecki; E. Alves
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 905 KB
- Volume
- 242
- Category
- Article
- ISSN
- 0168-583X
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