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Contactless measurement of the piezoresistive properties of heavily doped silicon by infrared reflectance

โœ Scribed by E. Bustarret; W. Grieshaber; C. Cowache

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
378 KB
Volume
33
Category
Article
ISSN
0924-4247

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Picosecond optical measurements of the p
Picosecond optical measurements of the properties of heavily carbon-implanted silicon
โœ Steven C. Moss; John F. Knudsen; John E. Wessel ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 312 KB

We have used picosecond transient photoreflectance techniques to measure the near-surface characteristics of unimplanted silicon and of silicon heavily implanted with carbon. These laser-based diagnostic techniques are non-destructive and allow measurement of the modification of near-surface propert