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Structural properties of thin silicide layers formed by high-dose metal implantation

โœ Scribed by A. Vantomme; M.F. Wu; G. Langouche; H. Vanderstraeten; Y. Bruynseraede


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
424 KB
Volume
53
Category
Article
ISSN
0169-4332

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โœ Shigeo Ohira; Masaya Iwaki ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 652 KB

Recent advances in high dose ion implantation The surface properties such as depth profile, techniques have produced silicon-on-insulator chemical bond and structure, and electrical prop-(SOI) substrates for the fabrication of electronic erties of oxide and nitride layers in aluminium devices. Oxyge