Structural characterization of InGaAs/InAlAs quantum wells grown on 0 (111)-InP substrates

✍ Scribed by A. Vilà; A. Cornet; J.R. Morante; A. Georgakilas; G. Halkias; N. Bélcourt

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 238 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(96)00140-1

✦ Synopsis

Reccnt studies on HEMT structures according to their growth orientation have attracted much interest from the viewpoint of physics and novel device applications. However, the optimization of their properties needs a high degree of crystalline quality. In this work, the structural characteristics of the la~,ers present on InGaAs/InAIAs HEMT structures grown on (111)-InP substrates have been analyzed by atomic force and transmission electron microscopies. The prcsence of a strained quantum well induces a defect structurc and surface morphology quite different from those observed in similar samples without the quamrum well. These results show that an accurate control of the growth conditions is necessary to obtain acceptable structural quality for (111) devices.