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Optical characterization of strained InGaAs/InP quantum well structures

✍ Scribed by K. Wolter; R. Schwedler; B. Gallmann; Ch. Jaekel; M. Stollenwerk; J. Camassel; J.P. Laurenti; S. Juillaguet

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
192 KB
Volume
15
Category
Article
ISSN
0167-9317

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The structural and compositional analysis of strain relaxed InGaAs/InP multi quantum wells (MQWs) have been carried out using high resolution X-ray diffraction (HRXRD), Raman spectroscopy (RS) and Rutherford backscattering spectrometry (RBS). The surface morphology has been investigated by atomic fo