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Electro-optic properties of InGaAs/InP multi-quantum well PIN structures

✍ Scribed by J. Kováč; A. Šatka; B. Rheinländer


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
393 KB
Volume
126
Category
Article
ISSN
0022-0248

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Band structure of very narrow InGaAs/InP
✍ F. Dujardin; N. Marréaud; J.P. Laurenti 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 115 KB

Band structure calculations are performed on narrow InGaAs/InP quantum wells (QWs) including gradual interface effects. Within the confines of the envelope approximation, the transfer matrix method is used, with adaptation to multi-band models. A comparison is made for two structures with fundamenta