Band structure of very narrow InGaAs/InP
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F. Dujardin; N. Marréaud; J.P. Laurenti
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Article
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1997
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Elsevier Science
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English
⚖ 115 KB
Band structure calculations are performed on narrow InGaAs/InP quantum wells (QWs) including gradual interface effects. Within the confines of the envelope approximation, the transfer matrix method is used, with adaptation to multi-band models. A comparison is made for two structures with fundamenta