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Optical investigations of strained InGaAs quantum wells

✍ Scribed by G. Sek; M. Ciorga; J. Misiewicz; D. Radziewicz; R. Korbutowicz; M. Panek; M. Tłaczała

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
92 KB
Volume
7
Category
Article
ISSN
1616-301X

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✦ Synopsis

InGaAs/GaAs MOCVD-grown quantum wells have been investigated. Photoluminescence (PL) measurements have shown heavy-hole-related excitonic transitions within the temperature range from 10 to 100 K for all samples. In room-temperature photoreflectance (PR), sharp heavy-and lighthole excitonic transitions in the quantum wells have been observed. The transition energies obtained have been compared with values derived from theoretical considerations using the envelope function model including lattice-mismatch-related stress. The heavy-and light-hole transitions have been identified as excitonic transitions of types I and II respectively. *

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