InGaAs/GaAs MOCVD-grown quantum wells have been investigated. Photoluminescence (PL) measurements have shown heavy-hole-related excitonic transitions within the temperature range from 10 to 100 K for all samples. In room-temperature photoreflectance (PR), sharp heavy-and lighthole excitonic transiti
β¦ LIBER β¦
Photovoltaic Spectroscopy Studies of Strained InGaAs/GaAs Quantum Wells
β Scribed by Zheng-Yun Wu; Xiao-Jun Wang; Qi-Sheng Huang
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 149 KB
- Volume
- 213
- Category
- Article
- ISSN
- 0370-1972
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