Reccnt studies on HEMT structures according to their growth orientation have attracted much interest from the viewpoint of physics and novel device applications. However, the optimization of their properties needs a high degree of crystalline quality. In this work, the structural characteristics of
✦ LIBER ✦
InxGa1−xAs/InP quantum well structures grown on [111]B InP
✍ Scribed by M. Hopkinson; J.P.R. David; E.A. Khoo; A.S. Pabla; J. Woodhead; G.J. Rees
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 409 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0026-2692
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Structural characterization of InGaAs/In
✍
A. Vilà; A. Cornet; J.R. Morante; A. Georgakilas; G. Halkias; N. Bélcourt
📂
Article
📅
1997
🏛
Elsevier Science
🌐
English
⚖ 238 KB
Electronic subband studies of InP/InAs/I
✍
T.W. Kim
📂
Article
📅
1995
🏛
Elsevier Science
🌐
English
⚖ 397 KB
SEM observation of InP/ErP/InP double he
✍
T. Hirata; T. Akane; S. Jinno; T. Kuno; Y. Yang; Y. Fujiwara; A. Nakamura; Y. Ta
📂
Article
📅
2003
🏛
Elsevier Science
🌐
English
⚖ 284 KB
InP, GaInAs and quantum well structures
✍
F. Scholz; P. Wiedemann; U. Nerz; K.W. Benz; G. Tränkle; E. Lach; A. Forchel; G.
📂
Article
📅
1986
🏛
Elsevier Science
🌐
English
⚖ 613 KB
Pseudomorphic GaxIn1−xAs on InP for HEMT
✍
H. Künzel; H.G. Bach; J. Böttcher; J. Dickmann; H. Dämbkes; G. Nachtwei; S. Heid
📂
Article
📅
1992
🏛
Elsevier Science
🌐
English
⚖ 280 KB
Electro-absorption modulator using a typ
✍
C. Lugand; T. Benyattou; G. Guillot; T. Venet; M. Gendry; G. Hollinger
📂
Article
📅
1998
🏛
Elsevier Science
🌐
English
⚖ 107 KB
In this paper photoluminescence measurements at low temperature under different excitation powers were carried out on an InGaAs tensile strained (x = 0.3) quantum well with InGaAs barriers lattice matched (LM) to InP. Evidence of a type-II recombination was found between carriers confined in the ten