✦ LIBER ✦

Electronic subband studies of InP/InAs/InxGa1−xAs asymmetric double quantum wells

✍ Scribed by T.W. Kim

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 397 KB
Volume: 94
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(95)00094-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electronic Properties of InAs/GaAs Quant

Electronic Properties of InAs/GaAs Quantum Dots Covered by an InxGa1–xAs Quantum Well

✍ F. Guffarth; R. Heitz; A. Schliwa; O. Stier; A.R. Kovsh; V. Ustinov; N.N. Ledent 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 112 KB 👁 1 views

Photoluminescence study of symmetric, co

Photoluminescence study of symmetric, coupled, double InxGa1−xAs-GaAs quantum well structures

✍ D.C. Reynolds; K.R. Evans; B. Jogai; C.E. Stutz; P.W. Yu 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 623 KB

Photoluminescence excitation spectroscop

Photoluminescence excitation spectroscopy of InxGa1−xAs/GaAs strained-layer coupled double quantum wells

✍ Q. Xu; Z.Y. Xu; J.Z. Xu; B.Z. Zheng; H. Xia 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 403 KB

Electron effective mass determination in

Electron effective mass determination in asymmetric modulation-doped field-effect transistor heterostructures using InxGa1 − xAs quantum well and InAs–GaAs superlattice channels

✍ L.A. Cury; F.M. Matinaga; S.L.S. Freire; M.V.B. Moreira; J. Beerens; M.A. Py 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 115 KB

Phonon-Assisted Modulation of the Electr

Phonon-Assisted Modulation of the Electron Collection Efficiency into InxGa1—xAs/GaAs Quantum Wells

✍ P. Borri; M. Gurioli; M. Colocci; F. Martelli; M. Capizzi 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 142 KB 👁 2 views

Some properties of strained InxGa1-xAs/A

Some properties of strained InxGa1-xAs/Al0.28Ga0.72As quantum well structures studied using low temperature photoluminescence

✍ S.F. Yoon; K. Radhakrishnan; H.M. Li 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 315 KB

Low temperature photoluminescence measurements were carried out on pseudomorphlcally strained In \(\mathrm{Ga}_{1-\mathrm{A}} \mathrm{As}-\mathrm{Al} \mathrm{O}_{0.28} \mathrm{Ga}_{0.72} \mathrm{As}\) ternary-on-ternary heterostructures grown by molecular beam epitaxy to investigate the change in th