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Structural characterization of a-SiC:H by thermal desorption spectroscopy

✍ Scribed by F. Maass; J. Bertomeu; J.M. Asensi; J. Puigdollers; J. Andreu; J.C. Delgado; J. Esteve

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
255 KB
Volume
70-71
Category
Article
ISSN
0169-4332

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The present work reports on the optimization of the electrical properties of Al/a-SiC:H Schottky diodes by means of thermal annealing of a-SiC:H thin films. Optical transmission experiments have shown that the optical properties of the films are affected by thermal annealing when T a 4600 1C, due to