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Electrical Characterization of InGaN/GaN Multiple-Quantum-Well Structures by Thermal Admittance Spectroscopy

โœ Scribed by N.D. Nguyen; M. Schmeits; M. Germain; B. Schineller; M. Heuken


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
351 KB
Volume
0
Category
Article
ISSN
1862-6351

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Growth and Characterization of InGaN/GaN
โœ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 101 KB ๐Ÿ‘ 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t