๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Impact of post-growth thermal annealing on emission of InGaN/GaN multiple quantum wells

โœ Scribed by Cheng, Yung-Chen ;Jur??nas, S. ;Feng, Shih-Wei ;Yang, C. C. ;Kuo, Cheng-Ta ;Tsang, Jian-Shihn

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
84 KB
Volume
201
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Growth and Characterization of InGaN/GaN
Growth and Characterization of InGaN/GaN Multiple Quantum Wells on Ga-Polarity GaN by Plasma-Assisted Molecular Beam Epitaxy
โœ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 101 KB ๐Ÿ‘ 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t