In this study, dimethylchlorosilane diluted by hydrogen is used as the raw material, and silicon carbide crystals are grown on a silicon substrate at low temperature (< 500 Β°C) by the triode plasma CVD method. The plasma parameters, such as the electron temperature and the space potential in the spa
β¦ LIBER β¦
Characterization of a-SiC:H Films Deposited by RF Plasma CVD
β Scribed by Y.T. Kim; B. Hong; G.E. Jang; S.J. Suh; D.H. Yoon
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 437 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0232-1300
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