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Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

✍ Scribed by Wang, Lanxiang; Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia

Book ID: 121015048
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 775 KB
Volume: 83
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2013.01.031

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