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Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors

✍ Scribed by Amat, E. ;Martin-Martínez, J. ;Gonzalez, M. B. ;Rodríguez, R. ;Nafría, M. ;Aymerich, X. ;Verheyen, P. ;Simoen, E.

Book ID: 121744845
Publisher: AVS (American Vacuum Society)
Year: 2011
Tongue: English
Weight: 595 KB
Volume: 29
Category: Article
ISSN: 1520-8567
DOI: 10.1116/1.3523396

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