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Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers

✍ Scribed by Taoka, Noriyuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Takagi, Shinichi

Book ID: 125424365
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 698 KB
Volume: 108
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3512868

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