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Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal–insulator–semiconductor field-effect-transistors

✍ Scribed by Noriyuki Miyata; Hiroyuki Ishii; Yuji Urabe; Taro Itatani; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Momoko Deura; Masakazu Sugiyama; Mitsuru Takenaka; Shinichi Takagi

Book ID: 113797728
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 503 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.10.024

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Origin of electron mobility enhancement in (1&#xa0;1&#xa0;1)-oriented InGaAs channel metal–insulator–semiconductor field-effect-transistors

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