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Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

✍ Scribed by Taoka, Noriyuki; Yokoyama, Masafumi; Hyeon Kim, Sang; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; Jevasuwan, Wipakorn; Maeda, Tatsuro; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi

Book ID: 121388206
Publisher: American Institute of Physics
Year: 2013
Tongue: English
Weight: 639 KB
Volume: 103
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4824474

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