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Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass

✍ Scribed by Nakabayashi, Yukio; Ishihara, Takamitsu; Numata, Toshinori; Uchida, Ken; Takagi, Shinichi


Book ID
119971704
Publisher
Institute of Pure and Applied Physics
Year
2010
Tongue
English
Weight
196 KB
Volume
49
Category
Article
ISSN
0021-4922

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