Determination of deformation potential constant of the conduction band in Si from electron heating experiments on Si metal-oxide-semiconductor field-effect transistors

✍ Scribed by Park, K. H.; Unuma, T.; Hirakawa, K.; Takagi, S.

• Book ID: 121709763
• Publisher: American Institute of Physics
• Year: 2007
• Tongue: English
• Weight: 264 KB
• Volume: 91
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2786594