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Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal–oxide–semiconductor field-effect transistors

✍ Scribed by Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N. P.; Simoen, E.; Claeys, C.


Book ID
120510125
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
312 KB
Volume
73
Category
Article
ISSN
0003-6951

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