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Strain relaxation and compositional analysis of InGaN/GaN layers by Rutherford backscattering

✍ Scribed by E. Alves; S. Pereira; M.R. Correia; E. Pereira; A.D. Sequeira; N. Franco

Book ID: 114165481
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 206 KB
Volume: 190
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(01)01210-1

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