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Elimination of defects in In–Mg codoped GaN layers probed by strain analysis

✍ Scribed by Fu, Binglei; Liu, Zhe; Liu, Naixin; Li, Zhi; Si, Zhao; Wei, Xuecheng; Sun, Baojuan; Ma, Ping; Wei, Tongbo; Li, Jinmin; Wang, Junxi

Book ID: 126890194
Publisher: Institute of Pure and Applied Physics
Year: 2014
Tongue: English
Weight: 607 KB
Volume: 53
Category: Article
ISSN: 0021-4922
DOI: 10.7567/jjap.53.060301

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## Abstract We describe X‐ray and finite element analysis of dislocations, strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy. The experimental results reveal that the GaN wings are tilted upward at room temperature. The distribution of strain and tilt depend