Characterization of defects created in C
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Cloud Nyamhere; P.N.K. Deenapanray; F.D. Auret; F.C. Farlow
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Article
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2006
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Elsevier Science
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English
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We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defect