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Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements

โœ Scribed by O.S. Elsherif; K.D. Vernon-Parry; I.M. Dharmadasa; J.H. Evans-Freeman; R.J. Airey; M.J. Kappers; C.J. Humphreys


Book ID
113937461
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
751 KB
Volume
520
Category
Article
ISSN
0040-6090

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We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defect