Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

✍ Scribed by Feng, I. W.; Li, J.; Sedhain, A.; Lin, J. Y.; Jiang, H. X.; Zavada, J.

• Book ID: 121843977
• Publisher: American Institute of Physics
• Year: 2010
• Tongue: English
• Weight: 490 KB
• Volume: 96
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3295705