Theoretical analysis of defect formation in GaN:Mg crystals
โ Scribed by I. V. Rogozin; A. N. Georgobiani
- Book ID
- 111505183
- Publisher
- Allerton Press, Inc.
- Year
- 2007
- Tongue
- English
- Weight
- 459 KB
- Volume
- 34
- Category
- Article
- ISSN
- 1068-3356
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๐ SIMILAR VOLUMES
The influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN : Mg and GaN : Be crystals grown by a high pressure and high temperature process and GaN : Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been stud
GaN crystals grown from solutions of liquid gallium alloyed with Mg, at high pressure of nitrogen, are highly resistive and of very good structural quality, evidenced by X-ray diffraction measurements. The high structural quality of these crystals is also confirmed by selective etching of the N-pola