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Theoretical analysis of formation of defects in hafnia

✍ Scribed by Yu. N. Vil’k; V. E. Shvaiko-Shvaikovskii


Book ID
110627370
Publisher
Springer US
Year
2000
Tongue
English
Weight
477 KB
Volume
41
Category
Article
ISSN
1573-9139

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Defect Formation in Heterovalent ZnSe/Ga
✍ T. Nakayama; R. Kobayashi; K. Sano; M. Murayama 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 424 KB

simulations were performed to study the defect formation in ZnSe/GaAs heterovalent epitaxy. It was shown that when ZnSe is grown on the GaAs (001) As-rich cð4 Â 4Þ surface, As antisites become the origin of defects such as dislocations, while ZnSe grows in a step-flow manner on the GaAs (110) ð1 Â 2