Defect Formation in Heterovalent ZnSe/GaAs Epitaxy: Theoretical Study

✍ Scribed by T. Nakayama; R. Kobayashi; K. Sano; M. Murayama

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 424 KB
• Volume: 229
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200201)229:1<311::aid-pssb311>3.0.co;2-f

✦ Synopsis

simulations were performed to study the defect formation in ZnSe/GaAs heterovalent epitaxy. It was shown that when ZnSe is grown on the GaAs (001) As-rich cð4 Â 4Þ surface, As antisites become the origin of defects such as dislocations, while ZnSe grows in a step-flow manner on the GaAs (110) ð1 Â 2Þ surface without any sign of defect production. These results originate from the heterovalency between ZnSe and GaAs and well explain the observations.