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Evaluation of strain and In content in (InGaN/GaN) multiquantum wells by x-ray analysis

✍ Scribed by Krost, A.; Bläsing, J.; Lünenbürger, M.; Protzmann, H.; Heuken, M.


Book ID
126278865
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
400 KB
Volume
75
Category
Article
ISSN
0003-6951

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## Abstract We describe X‐ray and finite element analysis of dislocations, strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy. The experimental results reveal that the GaN wings are tilted upward at room temperature. The distribution of strain and tilt depend